Laser dazzling on complementary metal oxide semiconductor (CMOS) image FLOR-ESSENCE sensors is an effective method in optoelectronic countermeasures.However, previous research mainly focused on the laser dazzling under far fields, with limited studies on situations that the far-field conditions were not satisfied.In this paper, we established a Fresnel diffraction model of laser dazzling on a CMOS by combining experiments and simulations.We calculated that the laser power density and the area of saturated pixels on the detector exhibit a linear relationship with a slope of 0.
64 in a log-log plot.In the experiment, we found that the back side illumination (BSI-CMOS) matched the simulations, with an error margin of 3%, while the front side illumination (FSI-CMOS) slightly mismatched the simulations, with an error margin of 14%.We also found that the full-screen saturation threshold for the BSI-CMOS was 25% higher than the FSI-CMOS.Our work Grill Rack demonstrates the applicability of the Fresnel diffraction model for BSI-CMOS, which provides a valuable reference for studying laser dazzling.